Title :
Optimization of parametric yield
Author :
Director, Stephen W.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
Yield loss can be characterized as either catastrophic or parametric. Catastrophic yield loss is primarily do to local, or spot, defects that occur in a manufacturing process. On the other hand, parametric yield loss is due to global disturbances, such as mask misalignment. In this paper the author explores these two different types of yield loss and then reviews some methods that have been developed to maximize parametric yield
Keywords :
VLSI; integrated circuit manufacture; optimisation; process control; VLSI; catastrophic yield loss; fabrication; global disturbances; manufacturing process; mask misalignment; parametric yield loss; spot defects; yield maximization; Circuits; Conferences; Fabrication; Fluctuations; Inspection; Manufacturing processes; Optimization methods; Performance loss; Process control; Very large scale integration;
Conference_Titel :
Defect and Fault Tolerance on VLSI Systems, 1991. Proceedings., 1991 International Workshop on
Conference_Location :
Hidden Valley, PA
Print_ISBN :
0-8186-2457-4
DOI :
10.1109/DFTVS.1991.199938
