DocumentCode
3032368
Title
Study of the Corner Effects on Pi-Gate SOI MOSFETs
Author
Ruiz, F.G. ; Godoy, A. ; Gamiz, Francisco ; Donetti, L. ; Sampedro, C.
Author_Institution
Univ. de Granada, Granada
fYear
2007
fDate
Jan. 31 2007-Feb. 2 2007
Firstpage
76
Lastpage
79
Abstract
Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.
Keywords
MOSFET; Poisson equation; Schrodinger equation; silicon-on-insulator; Schrodinger-Poisson equations; corner effects; multiple gate SOI MOSFET; pi-gate SOI MOSFET; threshold voltages; Doping; Electrons; Electrostatics; FinFETs; Geometry; MOSFETs; Numerical simulation; Schrodinger equation; Silicon; Threshold voltage; Corner effects; Multi-Gate; Quantum effects; SOI; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2007 Spanish Conference on
Conference_Location
Madrid
Print_ISBN
1-4244-0868-7
Type
conf
DOI
10.1109/SCED.2007.383998
Filename
4271172
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