Title :
Study of the Corner Effects on Pi-Gate SOI MOSFETs
Author :
Ruiz, F.G. ; Godoy, A. ; Gamiz, Francisco ; Donetti, L. ; Sampedro, C.
Author_Institution :
Univ. de Granada, Granada
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; silicon-on-insulator; Schrodinger-Poisson equations; corner effects; multiple gate SOI MOSFET; pi-gate SOI MOSFET; threshold voltages; Doping; Electrons; Electrostatics; FinFETs; Geometry; MOSFETs; Numerical simulation; Schrodinger equation; Silicon; Threshold voltage; Corner effects; Multi-Gate; Quantum effects; SOI; Semiconductor devices;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383998
