Title :
Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs
Author :
Vasallo, B.G. ; González, T. ; Pardo, D. ; Mateos, J. ; Wichmann, N. ; Bollaert, S. ; Cappy, A.
Author_Institution :
Univ. de Salamanca, Salamanca
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance gm and the output conductance gd are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit gm / gd jointly with the lower value of the gate resistance Rg lead to an improvement of the extrinsic frequency performance (fmax and ft).
Keywords :
Monte Carlo methods; high electron mobility transistors; InAlAs-InGaAs; double-gate high electron mobility transistor; ensemble 2D Monte Carlo simulator; short-channel effect; Analytical models; Attenuation; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Monte Carlo methods; Performance analysis; Transconductance; Double-Gate HEMT; Monte Carlo simulation; dynamic behaviour;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383958
