Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. Diffusive regime

In this work a quantum corrected Ensemble Monte Carlo (Q-EMC) is employed to study ballistic and diffusive transport in ultrashort double gate SOI devices (DGSOI). The multi-valley effective conduction band edge (MV-ECBE) method has been used to include quantum effects. Different aggressively scaled devices have been used as benchmark structures. The simulations show that even for a 10 nm channel length device, the scattering can not be neglected. It is also shown a decreased in the number of the scattering events in the channel when the drain to source voltage is increased. As a consequence, the behaviour of the device can be considered as quasi-ballistic for high lateral field regime.