DocumentCode :
3032427
Title :
LM185 voltage reference radiation tests: Variable temperature and bias conditions
Author :
Hatch, Joel M.
Author_Institution :
Ohio State Univ. Nucl. Reactor Lab., Columbus, OH, USA
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
931
Lastpage :
933
Abstract :
TID results are presented for LM185 Micropower Voltage Reference operated under various bias conditions and temperatures. Higher operational temperatures and biased devices are more sensitive to TID degradation suggesting reduced end-of-life performance.
Keywords :
radiation hardening (electronics); semiconductor device testing; LM185 micropower voltage reference; LM185 voltage reference radiation tests; TID degradation; biased devices; operational temperatures; Current measurement; Degradation; Radiation effects; Temperature measurement; Temperature sensors; Testing; Voltage measurement; Bias Current; Dose Rate; Temperature; Total Ionizing Dose;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131332
Filename :
6131332
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3032427
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