Title :
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
Author :
Herrmann, Martin ; Grürmann, Kai ; Gliem, Fritz ; Kettunen, Heikki ; Ferlet-Cavrois, Véronique
Author_Institution :
Inst. of Comput. & Network Eng., Tech. Univ., Braunschweig, Germany
Abstract :
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
Keywords :
DRAM chips; integrated circuit testing; radiation hardening (electronics); DDR3 SDRAM; LET; Micron; Nanya; SEFI mitigation; Samsung; double-data-rate SDRAM; frequent reinitialization; heavy-ion SEE test; random SEU errors; synchronous dynamic random access memories; Conferences; Field programmable gate arrays; Performance evaluation; Radiation effects; SDRAM; Single event upset; DDR3; Heavy ions; SDRAM; SEE;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131333
