Title :
Modeling Germanium p-n Junctions for Multi-junction Solar Cell Applications
Author :
Espinet, P. ; Rey-Stolle, I. ; Galiana, B. ; Baudrit, M. ; Algora, C.
Author_Institution :
Univ. Politehnica de Madrid, Madrid
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
An efficient germanium cell is a key element for attaining high efficiency in state-of-the-art triple junction solar cells. This work summarizes our efforts in the field of modeling of the quantum efficiency of germanium p/n junctions for photovoltaic applications. An analytic tool is presented and the most relevant parameters are discussed and modeled. Finally, some hints for the optimum design of germanium solar cells are deduced form the simulations.
Keywords :
elemental semiconductors; germanium; p-n junctions; semiconductor device models; solar cells; Ge; multi-junction solar cells; p-n junctions; photovoltaic applications; quantum efficiency; triple-junction solar cells; Analytical models; Doping; Gallium arsenide; Germanium; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Telecommunications; Germanium; Multi-junction Solar Cells;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384002
