Title :
Growth, processing and characterization of 0.55-eV n/p/n monolithic interconnected modules
Author :
Murray, Christopher S. ; Fatemi, Navid ; Stan, Mark ; Wemsman, B. ; Wehrer, Rebecca J.
Author_Institution :
Emcore Photovoltaics, Albuquerque, NM, USA
Abstract :
This paper describes recent efforts on the growth, processing and characterization of 0.55 eV InGaAs n/p/n monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion. Novel compositional grading schemes, improved cell architectures and a variety of interconnect schemes have been investigated in order to maximize device power density and efficiency. Recent work has focused on the investigation of various cell interconnect strategies to optimize efficiency and recuperation without sacrificing electrical performance. The electrical and optical results of this study are presented herein
Keywords :
gallium arsenide; indium compounds; interconnections; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; thermophotovoltaic cells; 0.55 eV; InGaAs; InGaAs n/p/n monolithic interconnected modules; cell architectures; characterization; compositional grading schemes; device power density; efficiency; electrical performance; growth; processing; recuperation; thermophotovoltaic energy conversion; DH-HEMTs; Energy conversion; Etching; Indium gallium arsenide; Indium phosphide; Lattices; Optical buffering; Optical design; Optical devices; Optical interconnections;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916113
