Title :
Mesh Generation for "Atomistic" Simulation of Nanometre Scale MOSFETs
Author :
Aldegunde, Manuel ; García-Loureiro, Antonio J. ; Kalna, Karol ; Asenov, Asen
Author_Institution :
Univ. de Santiago de Compostela, Santiago de Compostela
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
We study intrinsic parameter fluctuations caused by atomicity of matter in a 10 nm gate length MOSFET through the use of a 3D parallel drift-diffusion simulator. To carry out the study we have developed a meshing scheme which allows to take into account the actual positions of the dopants in the crystal lattice. We illustrate the impact of random positions of dopants on the threshold voltage and the drain current of the device.
Keywords :
MOSFET; crystal structure; mesh generation; nanotechnology; semiconductor device models; semiconductor doping; 3D parallel drift-diffusion simulator; atomistic simulation; crystal lattice; drain current; mesh generation; nanometre scale MOSFET; semiconductor device models; threshold voltage; Doping; Fluctuations; Lattices; MOSFETs; Mesh generation; Semiconductor device modeling; Semiconductor devices; Semiconductor process modeling; Silicon; Threshold voltage; MOSFET; device modelling; mesh generation; simulation;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384003
