Title :
Radiation characterization of the austriamicrosystems 0.35 µm CMOS technology
Author :
Ramos-Martos, J. ; Arias-Drake, A. ; Ragel-Morales, A. ; Ceballos-Cáceres, J. ; Mora-Gutiérrez, J.M. ; Piñero-García, B. ; Muñoz-Díaz, M. ; Lagos-Florido, M.A. ; Espejo-Meana, S.
Author_Institution :
Centro Nac. de Microelectron., Inst. de Microelectron. de Sevilla, Sevilla, Spain
Abstract :
The design of mixed-signal ASICs for space requires a detailed knowledge of the behaviour of the technology to be used in an environment imposing radiation levels and temperatures beyond those found in standard applications. Commercial foundries providing standard CMOS technologies do not usually have or make available data on the behaviour of their devices under those conditions. Instituto de Microelectrónica de Sevilla and Universidad de Sevilla (IMSE-USE) have started a long term collaboration with the Spanish Instituto Nacional de Técnica Aeroespacial (INTA) to extend its experience on mixed-signal design to the field of ASICs for space applications. The assessment of a commercial (austriamicrosystems) 0.35 μm CMOS technology is a first step towards the development of a mixed-signal design methodology, including an RHBD digital library suitable for use in space conditions.
Keywords :
CMOS integrated circuits; application specific integrated circuits; integrated circuit design; radiation hardening (electronics); CMOS technology; IMSE-USE; INTA; RHBD digital library; austriamicrosystems; mixed-signal ASIC; mixed-signal design methodology; radiation characterization; size 0.35 mum; Annealing; Layout; Logic gates; Radiation effects; Semiconductor device measurement; Temperature measurement; Transistors; aerospace electronics; mixed-signal ASICs; radiation hardening;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131335