Title :
Minimally invasive neutron beam monitoring for single-event effects accelerated testing
Author :
Zhang, Lyn H. ; Platt, S.P.
Author_Institution :
Sch. of Comput., Eng. & Phys. Sci., Univ. of Central Lancashire, Preston, UK
Abstract :
The use of silicon photodiodes for local beam monitoring during neutron SEE tests is demonstrated. Results from irradiations at the LANSCE ICE House are presented and analyzed. Local fluence measurements can be made without significant pile-up, even in pulsed beams. Beam degradation by scatterers such as upstream experiments can be quantified.
Keywords :
elemental semiconductors; neutron effects; photodiodes; semiconductor device testing; silicon; LANSCE ICE House; Si; beam degradation; local beam monitoring; local fluence measurements; minimally invasive neutron beam monitoring; neutron SEE tests; silicon photodiodes; single-event effects accelerated testing; upstream experiments; Detectors; Ice; Monitoring; Neutrons; Particle beams; Radiation effects; Semiconductor device measurement; Neutron radiation effects; Particle beam measurements; Semiconductor device testing; Silicon radiation detectors;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131336
