Title :
Neutron displacement damage of an integrated bandgap voltage reference of a 90nm technology CMOS based SRAM
Author :
Puchner, H., Sr. ; Whatley, M. ; Tausch, J.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
We have investigated the impact of Neutron displacement damage on an integrated bandgap voltage reference analog circuitry. The voltage reference is constructed of parasitic CMOS bipolar transistors and hence susceptible to displacement damage. Pre- and post radiation characterization has been carried out and a radiation hardness against displacement damage of 2E14 Neutrons/cm2 has been determined for this analog circuit.
Keywords :
CMOS analogue integrated circuits; SRAM chips; bipolar transistors; nanotechnology; neutron effects; reference circuits; 90nm technology CMOS based SRAM; integrated bandgap voltage reference analog circuitry; neutron displacement damage; parasitic CMOS bipolar transistor; post radiation characterization; pre-radiation characterization; radiation hardness; size 90 nm; Arrays; Neutrons; Photonic band gap; Random access memory; Regulators; Temperature measurement; Voltage control; Neutron displacement damage; bandgap reference circuit; current mirror; high speed quad data rate SRAM;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131338
