Neutron displacement damage of an integrated bandgap voltage reference of a 90nm technology CMOS based SRAM

Author

Puchner, H., Sr. ; Whatley, M. ; Tausch, J.

Author_Institution

Cypress Semicond., San Jose, CA, USA

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

812

Lastpage

814

Abstract

We have investigated the impact of Neutron displacement damage on an integrated bandgap voltage reference analog circuitry. The voltage reference is constructed of parasitic CMOS bipolar transistors and hence susceptible to displacement damage. Pre- and post radiation characterization has been carried out and a radiation hardness against displacement damage of 2E14 Neutrons/cm² has been determined for this analog circuit.

Keywords

CMOS analogue integrated circuits; SRAM chips; bipolar transistors; nanotechnology; neutron effects; reference circuits; 90nm technology CMOS based SRAM; integrated bandgap voltage reference analog circuitry; neutron displacement damage; parasitic CMOS bipolar transistor; post radiation characterization; pre-radiation characterization; radiation hardness; size 90 nm; Arrays; Neutrons; Photonic band gap; Random access memory; Regulators; Temperature measurement; Voltage control; Neutron displacement damage; bandgap reference circuit; current mirror; high speed quad data rate SRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131338

Filename

6131338