Title :
Tritium-powered betacells based on AlxGa1-xAs
Author :
Andreev, V.M. ; Kevetsky, A.G. ; Kaiinovsky, V.S. ; Khvostikov, V.P. ; Larionov, V.R. ; Rumyantsev, V.D. ; Shvarts, M.Z. ; Yakimova, E.V. ; Ustinov, V.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The paper describes betavoltaic cells (BVC) based on A3B5 semiconductors. It is shown that wide band gap semiconductors such as AlGaAs ensure the efficient betavoltaic conversion of beta radiation from tritium and photovoltaic (PV) conversion of the light from tritium powered radioluminescent sources. Betavoltaic cells based on AlxGa1-xAs with ultrathin (0.01-0.03 μm) wide bandgap passivating window were developed. Output current densities as high as (0.75-1)10-6 A/cm2, open circuit voltage of 0.65-0.93 V and maximum power output of 0.55 μW/cm2 were achieved in the betacells in a capsule with tritium gas. Specific output power of 335 nW/Ci is ensured in the battery based on green tritium lamps and developed PV cells
Keywords :
III-V semiconductors; aluminium compounds; beta-rays; gallium arsenide; photoluminescence; photovoltaic cells; tritium; wide band gap semiconductors; 0.01 to 0.03 mum; 0.65 to 0.93 V; AlxGa1-xAs; AlGaAs; T; beta radiation; betavoltaic conversion; tritium powered radioluminescent sources; tritium-powered betacells; ultrathin wide bandgap passivating window; wide band gap semiconductors; Batteries; Circuits; Current density; Lamps; Photonic band gap; Photovoltaic systems; Power generation; Solar power generation; Voltage; Wide band gap semiconductors;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916117
