Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Author

Arias, J. ; Borruel, L. ; Romero, B. ; Esquivias, I.

Author_Institution

Univ. Miguel Hernandez, Alicante

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

119

Lastpage

122

Abstract

We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.

Keywords

carrier density; current density; current distribution; semiconductor device models; semiconductor lasers; surface emitting lasers; 2D simulation; 2D static model; current density profiles; current self-distribution effect; epitaxial structure; lateral carrier density profiles; photon rate equations; top-emitting index-guided structure; vertical-cavity surface-emitting lasers; Current density; Laser modes; Mirrors; Nonlinear optics; Optical scattering; Poisson equations; Semiconductor lasers; Semiconductor process modeling; Surface emitting lasers; Vertical cavity surface emitting lasers; Modeling; semiconductor lasers; vertical-cavity surface-emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.384008

Filename

4271183