Title :
Fluorine diffusion in step-doped InAlAs layers on InP substrate
Author :
Wakejima, A. ; Onda, K. ; Fujihara, A. ; Mizuki, E. ; Kanamori, M.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
The quantitative relation between fluorine (F) accumulation and Si donor concentration in n-InAlAs layers on InP substrate was investigated for several kinds of step-doped InAlAs samples using secondary ion mass spectroscopy. From the depth profile of F and Si donor in a periodic i-/n-InAlAs sample, we found that F accumulates only in n-InAlAs layers, passing through i-InAlAs layers. Also, we found that the amount of F accumulation in an n-InAlAs layer depends on the Si doping concentration. The experimental results can be explained by considering two states of F. In one state, F is bound to a Si donor and immobile, and in the other it is free and can diffuse
Keywords :
III-V semiconductors; aluminium compounds; diffusion; fluorine; indium compounds; secondary ion mass spectra; semiconductor doping; InAlAs:Si,F; InP; InP substrate; depth profile; fluorine diffusion; secondary ion mass spectroscopy; silicon donor concentration; step-doped i-/n-InAlAs layer; Doping; Electron mobility; Indium compounds; Indium phosphide; Laboratories; Mass spectroscopy; National electric code; Pollution measurement; Substrates; Surface contamination;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600220
