Title :
New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs
Author :
Moldovan, Oana ; Iñiguez, Benjamin ; Jiménez, David ; Roig, Jaume
Author_Institution :
Univ. Rovira i Virgili, Tarragona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson´s equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations.
Keywords :
MOSFET; Poisson equation; numerical analysis; 3D numerical device simulation; Poisson equation; capacitance characteristics; continuous charge control model; cylindrical undoped surrounding gate MOSFET; CMOS technology; Capacitance; Circuit simulation; Electrostatics; Integrated circuit modeling; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon; Surrounding Gate MOSFET; compact device modelling; intrinsic capacitances;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384009
