Title :
Single-junction GaSb and tandem GaSb/InGaAsSb and AlGaAsSb/GaSb thermophotovoltaic cells
Author :
Andreev, V.M. ; Khvostikov, V.P. ; Rumyantsev, V.D. ; Sorokina, S.V. ; Shvarts, M.Z.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The advanced technology of the single- and dual-junction TPV cells, based on GaSb was developed. Photocurrent density as high as 54 mA/cm2 under AM0 spectrum, efficiencies of 12.8% (AM1.5D, 120 suns) and 19.1% under cut-off AM0-spectrum (λ=900-1800 nm) were obtained. The deviations of Voc and FF in the GaSb 1 cm2 cells are in the following ranges: Voc=0.42-0.45 V and FF=0.7-0.72 at photocurrent of 1 A. The cells of 2 cm2 in area generate photocurrent up to 9 A at Voc=0.52 V. Tandem InGaAsSb (0.55 eV)/GaSb cells with Voc=0.65 V at Isc/1A cm2 were developed. Tandem AlGaAsSb(1 eV)/GaSb cells with expected Voc=1.1 V at Isc=1A/cm2 are under development as well
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; p-n junctions; photoconductivity; thermophotovoltaic cells; 0.42 to 0.45 V; 0.52 V; 0.65 V; 1 to 9 A; 1.1 V; 12.8 percent; 19.1 percent; 900 to 1800 nm; AM0 spectrum; AlGaAsSb-GaSb; GaSb; GaSb-InGaAsSb; Single-junction GaSb thermophotovoltaic cells; cut-off AM0-spectrum; dual-junction TPV cells; photocurrent density; tandem AlGaAsSb/GaSb thermophotovoltaic cells; tandem GaSb/InGaAsSb thermophotovoltaic cells; Cogeneration; Crystalline materials; Indium gallium arsenide; Photoconductivity; Photonic crystals; Photovoltaic cells; Power systems; Solar power generation; Substrates; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916120
