Title :
Equivalent Electrical Circuit Model for the Post-Breakdown Current in SiO2/TiO2 Gate Stacks
Author :
Miranda, E. ; Tinoco, J. ; Garduno, I. ; Estrada, M. ; Cerdeira, A.
Author_Institution :
Univ. Autonoma de Barcelona, Barcelona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
In this work we examine the electrical behavior of thin (~10 nm) SiO2/TiO2 gate insulator stacks in MOS capacitors that have undergone multiple hard breakdown events. The post-breakdown current is modeled using a simple equivalent electrical circuit consisting of a diode with series and parallel resistances. We show that the current flowing through the non-damaged oxide area still plays a significant role even after breakdown. Similarities with previous studied systems are also discussed.
Keywords :
MOS capacitors; equivalent circuits; semiconductor device breakdown; semiconductor device models; silicon compounds; titanium compounds; MOS capacitors; SiO2-TiO2; SiO2/TiO2 gate insulator stacks; electrical behavior; equivalent electrical circuit model; nondamaged oxide; post-breakdown current; Circuits; Dielectric materials; Diodes; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Tunneling; Voltage; MOS; breakdown; reliability;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384011
