Title :
Characterization of GaAs PN junction bonded on selenium sulphide (SeS2) treated Si substrates
Author :
Arokiaraj ; Taguchi, H. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Res. Center for Microstructures Devices, Nagoya Inst. of Technol., Japan
Abstract :
Thin-film epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) have been successfully lifted-off from the original GaAs substrate using the epitaxial lift-off (ELO) technique and robustly bonded to selenium sulphide treated silicon substrates without deteriorating the electrical, optical and structural properties of the device. The bonding is a low temperature process and the bonding mechanism is based on the surface reconstruction of the two semiconductors placed in contact. Nomarski surface contrast microscopy reveals that the surface is smooth and uniform after transplantation. Optical properties exhibited good characteristics without stress in the grafted films. The selenium sulphide treated Si substrate is transparent to light and the solar cell exhibits an efficiency of 5.5%
Keywords :
III-V semiconductors; MOCVD; MOCVD coatings; elemental semiconductors; epitaxial growth; gallium arsenide; p-n junctions; selenium compounds; semiconductor device measurement; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; surface treatment; 5.5 percent; GaAs; GaAs p-n junction characterisation; Nomarski surface contrast microscopy; SeS2; SeS2-treated Si substrates; Si; bonding mechanism; electrical properties; epitaxial lift-off technique; grafted films; low temperature; metal-organic chemical vapor deposition; optical properties; structural properties; surface reconstruction; thin-film epitaxial GaAs growth; transplantation; Bonding; Chemical vapor deposition; Gallium arsenide; Optical films; Semiconductor thin films; Sputtering; Substrates; Surface reconstruction; Surface treatment; Thin film devices;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916124
