1.62 eV/1.1 eV InGaP/InGaAs dual-junction solar cell development on lattice-mismatched GaAs

Author

Sinharoy, Samar ; Smith, Mark A. ; Weizer, Victor G. ; Pal, AnnaMaria ; Khan, Osman ; Scheiman, David A. ; Jenkins, Phillip P.

Author_Institution

Essential Res. Inc., Cleveland, OH., USA

fYear

2000

fDate

2000

Firstpage

1285

Lastpage

1288

Abstract

The authors report progress towards achieving a high efficiency monolithic dual-junction solar cell consisting of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs bottom cell grown on a lattice-mismatched GaAs substrate using a proprietary buffer layer scheme. They have achieved air mass zero (AMO), one-Sun efficiencies of 17.5% for the 1.1 eV InGaAs and 15.7% for the 1.6 eV InGaP standalone cells on lattice-mismatched GaAs. The predicted AMO, one-Sun efficiency of a 1.62 eV/1.1 eV n/p dual-junction cell is 27%. To date, they have achieved an efficiency of 19% in their dual-junction cells. Further process optimization experiments are currently underway, aimed at achieving the 27% efficiency goal

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; solar cells; 1.1 eV; 1.62 eV; 17.5 percent; 19 percent; 27 percent; InGaP-InGaAs; InGaP-InGaAs dual-junction solar cell; lattice-mismatched GaAs substrate; monolithic dual-junction solar cell; process optimization; proprietary buffer layer scheme; Buffer layers; Contracts; Design optimization; Gallium arsenide; Indium gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Production; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916125

Filename

916125