Title :
1.62 eV/1.1 eV InGaP/InGaAs dual-junction solar cell development on lattice-mismatched GaAs
Author :
Sinharoy, Samar ; Smith, Mark A. ; Weizer, Victor G. ; Pal, AnnaMaria ; Khan, Osman ; Scheiman, David A. ; Jenkins, Phillip P.
Author_Institution :
Essential Res. Inc., Cleveland, OH., USA
Abstract :
The authors report progress towards achieving a high efficiency monolithic dual-junction solar cell consisting of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs bottom cell grown on a lattice-mismatched GaAs substrate using a proprietary buffer layer scheme. They have achieved air mass zero (AMO), one-Sun efficiencies of 17.5% for the 1.1 eV InGaAs and 15.7% for the 1.6 eV InGaP standalone cells on lattice-mismatched GaAs. The predicted AMO, one-Sun efficiency of a 1.62 eV/1.1 eV n/p dual-junction cell is 27%. To date, they have achieved an efficiency of 19% in their dual-junction cells. Further process optimization experiments are currently underway, aimed at achieving the 27% efficiency goal
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; solar cells; 1.1 eV; 1.62 eV; 17.5 percent; 19 percent; 27 percent; InGaP-InGaAs; InGaP-InGaAs dual-junction solar cell; lattice-mismatched GaAs substrate; monolithic dual-junction solar cell; process optimization; proprietary buffer layer scheme; Buffer layers; Contracts; Design optimization; Gallium arsenide; Indium gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Production; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916125
