Title :
Characterizing, modeling, and simulating soft error susceptibility in cell-based designs in highly scaled technologies
Author :
Li, Y.F. ; Li, M. ; Zhao, J.Y. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Zhang, B. ; Wang, J.Q. ; Wang, D.L. ; Wang, Y.
Author_Institution :
Accelicon Technol., Inc., Cupertino, CA, USA
Abstract :
A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit modelling; radiation hardening (electronics); CMOS process; cell-based designs; pulse broadening effects; single event transient-induced soft error simulation; size 65 nm; soft error susceptibility modelling; systematic flow; Boolean functions; Data structures; Delay; Inverters; Logic gates; Pulse measurements; SPICE; Pulse broadening; Single Event Transient (SET); Soft Error Rate (SER);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131344
