Title :
InAs/GaAs Quantum Dots grown by Migration Enhanced Molecular Beam Epitaxy (MEMBE) and the lasing characteristics of Quantum Dot Laser Diode Emitting 1310 nm
Author :
Choi, Won Jun ; Song, Jin Dong ; Kim, Kwang Woong ; Cho, Nam Ki ; Ryu, Sung Pil ; Lim, Ju Young ; Lee, Jung Il
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Abstract :
We report InAs/GaAs quantum dots (QDs) grown by atomic layer epitaxy (ALE) based on migration enhanced molecular beam epitaxy (MEMBE) and the lasing characteristics of quantum dot laser diodes (QD-LDs). The InAs/GaAs ALE-QDs show more uniform size distribution, thinner wetting layer and the size controllability compared to those grown by conventional method (SK method). The QD-LD composed of 3-stacked InAs dot-in-a-well (DWELL) shows ground state lasing at 1310 nm with 155 A/cm2 of threshold current density and 103 K of characteristic temperature without any facet coating, which is comparable to those reported for QDLD based on SK QDs.
Keywords :
III-V semiconductors; atomic layer epitaxial growth; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor growth; semiconductor lasers; semiconductor quantum dots; InAs-GaAs; atomic layer epitaxy; characteristic temperature; ground state lasing; migration enhanced molecular beam epitaxy; quantum dot laser diodes; quantum dots; size distribution; temperature 103 K; threshold current density; wavelength 1310 nm; wetting layer; Atomic beams; Atomic layer deposition; Controllability; Diode lasers; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Stationary state; Threshold current;
Conference_Titel :
Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-89-955301-4-6
Electronic_ISBN :
978-89-955301-4-6
DOI :
10.1109/COINNGNCON.2006.4454620
