DocumentCode :
3032758
Title :
Fabrication of Si trench solar cells with improved radiation hardness for space applications
Author :
Presting, H. ; Konle, J. ; Behammer, D. ; Gruhle, A. ; Uebele, P. ; Strobl, G.
Author_Institution :
DaimlerChrysler Res. Center, Ulm, Germany
fYear :
2000
fDate :
2000
Firstpage :
1293
Lastpage :
1296
Abstract :
Mono-crystalline silicon (Si) space solar cells were fabricated with deep holes (0.5-0.7 × substrate thickness) etched into a standard p-doped Si substrate by a high etch rate plasma apparatus. After the etch an n+ emitter diffusion is done inside and outside of the holes followed by cleaning and thermal passivation. The cells have been electron irradiated by a 1 MeV radiation with different doses up to 3 1015 cm-2 and the cell efficiency η, the short circuit current Isc and the open circuit voltage Voc have been measured before and after radiation and compared to a Si reference cell. The fabrication process of the trench cell has been kept fully compatible with standard Si cell processing
Keywords :
electron beam effects; elemental semiconductors; isolation technology; passivation; radiation hardening (electronics); short-circuit currents; silicon; solar cells; space vehicle power plants; 1 MeV; Si; Si reference cell; Si trench solar cells fabrication; cleaning; deep holes; electron irradiation; high etch rate plasma apparatus; improved radiation hardness; mono-crystalline silicon space solar cells; n+ emitter diffusion; open circuit voltage; p-doped Si substrate; short circuit current; space applications; substrate thickness; thermal passivation; Cleaning; Electrons; Etching; Fabrication; Passivation; Photovoltaic cells; Plasma applications; Short circuit currents; Silicon; Time of arrival estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.916127
Filename :
916127
Link To Document :
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