Title :
Implementing realistic heavy ion tracks in a SEE prediction tool: Comparison between different approaches
Author :
Raine, Mélanie ; Hubert, Guillaume ; Paillet, Philippe ; Gaillardin, Marc ; Bournel, Arnaud
Author_Institution :
CEA, DIF, Arpajon, France
Abstract :
Different radial ionization profiles modeling approaches are compared for the energy deposition representation in a Single Event Effects (SEE) prediction tool. The total SEU cross section calculated with the different approaches is compared for various SOI and bulk technologies, along with the MBU prediction. A “refined average” approach is identified as a good trade-off for implementation in an engineer SEE prediction tool, taking into account sufficiently detailed physics to predict the sensitivity of SOI and bulk devices down to the 32 nm technological node, without asking for too much computer resources.
Keywords :
SRAM chips; radiation hardening (electronics); silicon-on-insulator; MBU prediction; SEE prediction tool; SEU cross section; SOI technology; SRAM cells; Si; bulk technology; energy deposition representation; heavy-ion tracks; radial ionization profile modeling approach; refined average approach; single-event effects; Databases; Ions; Monte Carlo methods; Nitrogen; Predictive models; Random access memory; Simulation; Geant4; Heavy ion; SEE prediction; SRAM;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131346