Title :
SiGe Bipolar Transistors for Harsh Radiation Environments
Author :
Diez, S. ; Ullan, M. ; Campabadal, F. ; Lozano, Manuel ; Pellegrini, Giulio ; Knoll, D.
Author_Institution :
Centro Nacional de Microelectron., Barcelona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
We have performed radiation hardness studies over three different SiGe HBT technologies from IHP (Innovation for High Performance Microelectronics). We have studied gamma and neutron irradiations to study separately ionization and displacement effects. The specific application for which these technologies are being evaluated is the front-end readout electronics of the detector modules of the future ATLAS upgrade for the Super-LHC, but space-oriented applications are also considered. It can be seen from the results strong gain degradations for the highest doses and fluencies, and an indication of damage saturation in some cases. Only small differences can be observed among the three different technologies with respect to their radiation hardness.
Keywords :
bipolar transistors; radiation hardening (electronics); silicon compounds; HBT technology; bipolar transistors; detector modules; front-end readout electronics; gamma irradiation; neutron irradiation; radiation hardness; Bipolar transistors; Germanium silicon alloys; Heterojunction bipolar transistors; Ionization; Microelectronics; Neutrons; Readout electronics; Silicon germanium; Space technology; Technological innovation; Displacement damage; SiGe HBT; gamma radiation; hardness assurance; ionization damage; neutron radiation;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384016
