Title :
Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique
Author :
Darracq, F. ; Mbaye, N. ; Larue, C. ; Pouget, V. ; Azzopardi, S. ; Lorfevre, E. ; Bezerra, F. ; Lewis, D.
Author_Institution :
IMS Lab., Univ. Bordeaux 1, Talence, France
Abstract :
The Single Event Burnout sensitive volume of power MOSFETs is investigated using the laser Two-Photon Absorption Technique. A first discussion about the efficiency of this technique is given.
Keywords :
absorption; power MOSFET; two-photon processes; laser two-photon absorption technique; single event burnout sensitive volume; vertical power MOSFET; Absorption; Epitaxial layers; Laser beams; Lasers; MOSFETs; Measurement by laser beam; Substrates; Sensitive volume; Single Event Burnout; Two Photon Absorption; vertical power MOSFET;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131350
