ARXPS characterization of InGaP/GaAs heterointerface grown by MOVPE

Author

López, M.C. ; Galiana, B. ; Algora, C. ; Rey-Stolle, I. ; Garcia, I. ; Gabas, M. ; Ramos-Barrado, J.R.

Author_Institution

Univ. de Malaga, Malaga

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

169

Lastpage

172

Abstract

This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by metal organic vapor phase epitaxy (MOVPE), by means of X-ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sputtering and by angle resolved XPS (ARXPS). Firstly, from the corrected Auger parameter for different angles, we have determined the depth of the Ga oxide in the superficial GaAs layer by environmental contamination and we have studied its influence in the interface. The thickness of Ga₂O₃ is only of some Armstrong and it no presents an important influence in the interface.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; vapour phase epitaxial growth; Armstrong; InGaP-GaAs; MOVPE; angle resolved X-ray photoelectrons spectroscopy; auger parameter; chemical composition; metal organic vapor phase epitaxy; Epitaxial growth; Epitaxial layers; Gallium arsenide; Organic chemicals; Oxidation; Photovoltaic cells; Photovoltaic systems; Solar power generation; Spectroscopy; Sputtering; Chemical analysis; Gallium compounds; Interface phenomena; XPS;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.384019

Filename

4271196