• DocumentCode
    3033164
  • Title

    Influence of beam conditions and energy for SEE testing

  • Author

    Ferlet-Cavrois, V. ; Schwank, J.R. ; Liu, S. ; Muschitiello, M. ; Beutier, Th ; Javanainen, A. ; Hedlund, A. ; Poivey, C. ; Zadeh, A. ; Harboe-Sorensen, R. ; Santin, G. ; Nickson, B. ; Menicucci, A. ; Binois, C. ; Peyre, D. ; Hoeffgen, S.K. ; Metzger, S.

  • Author_Institution
    Eur. Space Agency, ESA/ESTEC, Noordwijk, Netherlands
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    690
  • Lastpage
    699
  • Abstract
    The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles; SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results.
  • Keywords
    SRAM chips; power MOSFET; radiation hardening (electronics); semiconductor device testing; GEANT4 simulations; SEE testing; SRAM; beam conditions; heavy-ion test conditions; power MOSFET; test vehicles; Energy measurement; MOSFETs; Performance evaluation; Radiation effects; Shadow mapping; Wires; Xenon; Power MOSFETs; SRAM; ion beam energy; specie effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131365
  • Filename
    6131365