Title :
3-D numerical simulation of bipolar amplification in Junctionless Double-Gate MOSFETs under heavy-ion irradiation
Author :
Munteanu, Daniela ; Autran, Jean-Luc
Author_Institution :
IM2NP, Marseille, France
Abstract :
The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to the higher doping levels in the channel.
Keywords :
MOSFET; digital simulation; electronic engineering computing; numerical analysis; radiation hardening (electronics); 3D numerical simulation; IM-DGFET; JL-DGFET; bipolar amplification; charge collection; doping levels; heavy-ion irradiation; inversion mode DGFET; inversion-mode devices; junctionless devices; junctionless double-gate MOSFET; transient response; Doping; Films; Logic gates; MOSFETs; Semiconductor process modeling; Silicon; Transient analysis; Double-Gate; Junctionless transistor; bipolar amplification; heavy ion; single-event transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131370
