Title :
Role of Doping and Thickness of Emitter in the Efficiency of Monocrystalline Si Solar Cells
Author :
Vazquez, Carlos ; Alonso, J. ; Vazquez, Miguel Angel ; Caballero, L.J. ; Martinez, A. ; Romero, R. ; Ramos-Barrado, J.R.
Author_Institution :
Univ. de Malaga, Malaga
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
In order to improve the efficiency of Czocharalski - Si (Cz-Si) photovoltaic cells, we have studied the distribution losses from recombination in Cz-Si commercial standard cell (Isofoton S.A.) by means of I-V measurements under solar simulation illumination with a surface irradiance of 1000 W/m2 and a light spectrum corresponding to a relative air mass of 1.5 G and the PC-ID software. The quantum efficiency of these cells was also measured. An important ratio of losses is localized in the emitters with a low resistance (40 Omega/ ). To decrease the Auger recombination in these emitters we have changed the phosphorous diffusion condition in the furnace in order to obtain shallower and low doping emitters (80 Omega/ ). A new paste for fingers and a metallization procedure were also developing. These new cells present an improvement in its efficiency of 3.5%.
Keywords :
Auger effect; electron-hole recombination; metallisation; silicon; solar cells; Auger recombination; Czocharalski-silicon photovoltaic cells; I-V measurements; Si; light spectrum; metallization procedure; monocrystalline solar cells; phosphorous diffusion condition; quantum efficiency; resistance 40 ohm; resistance 80 ohm; solar simulation illumination; surface irradiance; Doping; Electrical resistance measurement; Furnaces; Lighting; Loss measurement; Measurement standards; Photovoltaic cells; Radiative recombination; Software measurement; Software standards; Photovoltaic cell fabrication; Silicon; Solar energy; Spectral analysis;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384040
