Title :
Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments
Author :
Gonzalez-Velo, Y. ; Boch, J. ; Saigné, F. ; Roche, N. J -H ; Pérez, S. ; Deneau, C. ; Vaille, J.-R. ; Dusseau, L. ; Schrimpf, R.D. ; Lorfévre, E.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
Unexpected recovery observed in previous dose-rate switching experiments is investigated. Irradiation and room-temperature annealing are performed on LM124 microcircuits and results are discussed in terms of hardness assurance.
Keywords :
annealing; bipolar digital integrated circuits; radiation hardening (electronics); LM124 microcircuits; biased bipolar devices; hardness assurance; room temperature annealing effect; switched dose-rate experiments; temperature 293 K to 298 K; Annealing; Degradation; Estimation; Performance evaluation; Pins; Radiation effects; Switches; Analog IC; Dose; ELDRS; Switched dose-rate technique; annealing; bipolar devices;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131373
