Title :
X-ray radiation effects in Overlapping Circular-Gate MOSFET´s
Author :
De Lima, J.A. ; Silveira, M.A.G. ; Cirne, K.H. ; Santos, R.B.B. ; Medina, N.H.
Author_Institution :
Centra de Tecnol. da Informacao, Campinas, Brazil
Abstract :
IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT´s) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; X-ray effects; radiation effects; CMOS process; ELT overlapping circular-gate transistors; IV-characteristics; O-CGT subthreshold behavior; X-ray radiation effects; overlapping circular-gate MOSFET; rectangular-gate transistors; size 0.35 mum; CMOS process; Layout; Leakage current; Logic gates; MOSFET circuits; Radiation effects; Transistors; MOSFET; Total Ionizing Dose (TID); X-ray; electronic devices; leakage current; radiation effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131374
