DocumentCode
3033331
Title
A Multijunction Solar Cell Simulation Program for the Development of Concentration Systems
Author
Villanueva, J. A López ; Díaz, V. ; Bolivar, S. Rodríguez ; Tejada, J. A Jiménez ; Rodríguez, E.
Author_Institution
Univ. de Granada, Granada
fYear
2007
fDate
Jan. 31 2007-Feb. 2 2007
Firstpage
262
Lastpage
265
Abstract
The first version of a solar cell simulator specifically designed for the analysis of multijunction solar cells is presented. The simulation program solves the Poisson and continuity equations by using a procedure optimized for multilayer structures. It includes the radiative interband, Shockley-Read-Hall and Auger recombination mechanisms, and computes the generation function of electron-hole pairs from the optical parameters of the cell materials. The dependence of these optical parameters with the photon energy has been included, taking into account the doping level and its effect on bandgap narrowing. The simulator is applied to the analysis of a dual-junction GalnP/GaAs solar cell, obtaining results comparable to experimental data reported by different authors. More advanced versions of the simulator are in progress, with the aim of obtaining a tool useful for optimal design of multijunction solar cells.
Keywords
III-V semiconductors; Poisson equation; doping profiles; electron-hole recombination; gallium arsenide; indium compounds; multilayers; solar cells; spectral line narrowing; Auger recombination mechanisms; Poisson equation; Shockley-Read-Hall mechanism; bandgap narrowing; concentration systems; continuity equations; doping level; electron-hole pairs generation; multijunction solar cell simulation program; multilayer structures; optical parameters; photon energy; radiative interband mechanism; Analytical models; Computational modeling; Nonhomogeneous media; Optical computing; Optical materials; Photonic band gap; Photovoltaic cells; Poisson equations; Solar power generation; Spontaneous emission; Photovoltaic cells; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2007 Spanish Conference on
Conference_Location
Madrid
Print_ISBN
1-4244-0868-7
Type
conf
DOI
10.1109/SCED.2007.384042
Filename
4271220
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