DocumentCode :
3033479
Title :
Cu to Cu interconnect using 3D-TSV and wafer to wafer thermocompression bonding
Author :
Huyghebaert, Cedric ; Van Olmen, Jan ; Civale, Yann ; Phommahaxay, Alain ; Jourdain, Anne ; Sood, Sumant ; Farrens, Shari ; Soussan, Philippe
Author_Institution :
Imec, Leuven, Belgium
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
In this paper we report on the use of Silicon wafer to wafer bonding technology using Trough Silicon Vias (TSV) and Cu to Cu hybrid interconnects. We demonstrate that multiple wiring levels of two separate wafers, can be interconnected on a full wafer scale by means of wafer bonding using classical metallization schemes found in IC´s such as Al and Cu interconnect technologies. The wafer to wafer stacking is accomplished by back to face aligned wafer bonding using a combination of polymer bonding and copper to copper thermo-compression bonding. The Cu TSV-last process is inserted after the integration of a classical Al interconnect scheme. The top wafer is thinned down to 25μm and bonded to the landing wafer by hybrid Cu-Cu bonding in a high force bonding tool. Measurements of TSV interconnect chain structures covering the full wafer surface are provided as a demonstration of the relevance of such a process route.
Keywords :
aluminium; copper; integrated circuit interconnections; integrated circuit metallisation; three-dimensional integrated circuits; wafer bonding; 3D-TSV; Al; Cu; Cu-to-Cu interconnect; metallization scheme; polymer bonding; silicon wafer-to-wafer bonding; through silicon vias; wafer-to-wafer stacking; wafer-to-wafer thermo-compression bonding; wiring level; Bonding forces; Copper; LAN interconnection; Metallization; Polymers; Silicon; Stacking; Through-silicon vias; Wafer bonding; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510444
Filename :
5510444
Link To Document :
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