Title :
Radiation-induced oxide charge in low- and high-H2 environments
Author :
Rowsey, Nicole L. ; Law, Mark E. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Tuttle, Blair R. ; Pantelides, Sokrates T.
Author_Institution :
Electr. Eng. Dept., Univ. of Florida, Gainesville, FL, USA
Abstract :
Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Hole trapping dominates for typical H2 densities, but protons can dominate at high H2 densities.
Keywords :
annealing; hole traps; hydrogen; integrated circuit packaging; radiation effects; electronic structure calculations; high-hydrogen environments; hole trapping; hydrogen densities; integrated circuit packaging; irradiation measurements; low-hydrogen environments; oxide-trapped charge mechanisms; protons; radiation-induced oxide charge; Charge carrier processes; Educational institutions; Equations; Mathematical model; Object oriented modeling; Protons; Silicon; Nit; Not; Radiation-Induce Oxide Charge;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131384
