• DocumentCode
    3033596
  • Title

    Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation

  • Author

    Quinteros, C. ; Salomone, L. Sambuco ; Redín, E. ; Rafí, J.M. ; Zabala, M. ; Faigón, A. ; Palumbo, F. ; Campabadal, F.

  • Author_Institution
    Consejo Nac. de Investig. Cientificas y Tec. (CONICET), Comision de Energia Atomica (CNEA), San Martín, Argentina
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    67
  • Lastpage
    72
  • Abstract
    MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric.
  • Keywords
    MIS devices; high-k dielectric thin films; radiation hardening (electronics); 16O radiation; C-V curves; MIS capacitive structures; gamma radiation; high-K dielectrics; p radiation; Aluminum oxide; Capacitance; Capacitance-voltage characteristics; Capacitors; Hafnium compounds; Hysteresis; Radiation effects; High-K gate dielectrics; MOS devices; Radiation Effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131387
  • Filename
    6131387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3033596