Title :
Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS
Author :
Verbeeck, Jens ; Van Uffelen, Marco ; Steyaert, Michiel S J ; Leroux, Paul
Author_Institution :
Dept. ESAT-MICAS, Katholieke Univ. Leuven, Leuven, Belgium
Abstract :
In this paper a radiation tolerant configurable instrumentation amplifier for use with resistive sensors, like strain gauge pressure sensors, is presented. The design features a 1.5 V differential amplifier, consuming 1.5 mW and utilizing a correlated double sampling technique (CDS) with a sample frequency of 20 kHz. The gain of the amplifier is digitally configurable between 27 and 400 and the input referred noise density equals 8.6 μV at room temperature. The circuit has a simulated radiation tolerance exceeding 1 MGy.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; electric sensing devices; radiation hardening (electronics); sampling methods; CDS; CMOS technology; MGy tolerant instrumentation amplifier; correlated double sampling technique; differential amplifier; frequency 20 kHz; power 1.5 mW; radiation tolerant configurable instrumentation amplifier; resistive sensors; size 130 nm; strain gauge pressure sensors; temperature 293 K to 298 K; voltage 1.5 V; voltage 8.6 muV; CMOS integrated circuits; Capacitors; Gain; Noise; Noise level; Radiation effects; Switches; Analog integrated circuits; CMOS technology; Pressure gauges; Reactor instrumentation; Switched capacitor circuits;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131389
