Single-stage travelling wave amplifier for power applications

Author

Yazgi, Metin ; Sayginer, Mustafa ; Virdee, Bal S. ; Toker, Ali ; Kuntman, Hakan

Author_Institution

Dept. of Electron. & Commun. Eng., Istanbul Tech. Univ., Maslak, Turkey

fYear

2010

fDate

20-22 May 2010

Firstpage

949

Lastpage

952

Abstract

In this paper a Class-A power amplifier design is described that comprises of a single transistor using artificial transmission lines. The amplifier´s structure can be considered as a conventional travelling wave amplifier comprising only one transistor referred to here as a single-stage travelling wave amplifier (SSTWA). The SSTWA structure using 0.35μm SiGe process is demonstrated to provide medium power output and power-added efficiency results making the device suitable for numerous power applications in wireless microwave systems.

Keywords

Ge-Si alloys; distributed amplifiers; microwave power amplifiers; transmission lines; travelling wave amplifiers; SSTWA structure; SiGe; amplifier structure; artificial transmission line; class-A power amplifier design; distributed amplifier; medium power output; power application; power-added efficiency; single transistor; single-stage travelling wave amplifier; size 0.35 mum; wireless microwave system; Broadband amplifiers; Distributed parameter circuits; Fabrication; Impedance; Parasitic capacitance; Power amplifiers; Power transmission lines; Silicon germanium; Transistors; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Optimization of Electrical and Electronic Equipment (OPTIM), 2010 12th International Conference on

Conference_Location

Basov

ISSN

1842-0133

Print_ISBN

978-1-4244-7019-8

Type

conf

DOI

10.1109/OPTIM.2010.5510454

Filename

5510454