Title :
The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD
Author :
Ohguro, T. ; Sugiyama, N. ; Imai, K. ; Usuda, K. ; Saito, M. ; Yoshitomi, T. ; Ono, M. ; Momose, H.S. ; Iwai, H.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
Very high gm values of intrinsic doped epitaxial channel MOSFETs compared with those of bulk MOSFETs has been experimentally confirmed for the first time. It has been found that preheating of the wafer before the UHV-CVD epitaxial growth is critically important to improve the crystal quality of the epitaxial layer and thus to obtain the high gm values. By adopting 700/spl deg/C 5 minutes preheating, a very high gm value of 630 mS/mm was obtained for a 0.1 /spl mu/m epitaxial channel n-MOSFET.
Keywords :
MOSFET; interface phenomena; oxygen; semiconductor growth; silicon; vapour phase epitaxial growth; 0.1 micron; 5 min; 630 mS/mm; 700 C; NMOSFET; Si; Si:O; UHV-CVD epitaxial growth; crystal quality; epitaxial Si channel N-MOSFETs; epitaxial Si/Si substrate interface; high gm values; intrinsic doped epitaxial channel MOSFETs; transconductance; wafer preheating; Boron; Epitaxial growth; Epitaxial layers; Impurities; MOSFET circuits; Oxygen; Silicon; Substrates; Temperature; Transconductance;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520840
