DocumentCode
3033732
Title
A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects
Author
Lázaro, A. ; Nae, B. ; Moldovan, O. ; Iniguez, B.
Author_Institution
Univ. Rovira i Virgili, Tarragona
fYear
2007
fDate
Jan. 31 2007-Feb. 2 2007
Firstpage
351
Lastpage
354
Abstract
This paper presents a new approach for an analytical model of nanoscale double-gate (DG) MOSFET. The equivalent circuit is considered over a fully distributed active line, opening the door to obtain a compact and unified small equivalent circuit that includes noise contributions.
Keywords
MOSFET; nanoelectronics; technology CAD (electronics); CAD model; RF noise; equivalent circuit; nanoscale double-gate MOSFET; Active noise reduction; Admittance; Capacitance; Capacitors; Circuit noise; Crosstalk; Delay effects; Equivalent circuits; MOSFET circuits; Radio frequency; Compact noise modelling; Double-Gate MOSFETs; High Frequency Operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2007 Spanish Conference on
Conference_Location
Madrid
Print_ISBN
1-4244-0868-7
Type
conf
DOI
10.1109/SCED.2007.384066
Filename
4271244
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