Alpha-Soft Error Rate due to new generations of high-κ gate oxides and metal gate electrodes in a 32 nm node

Author

Gedion, M. ; Wrobel, F. ; Saigné, F. ; Schrimpf, R.D.

Author_Institution

UMR, Univ. Montpellier 2, Montpellier, France

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

281

Lastpage

284

Abstract

Soft errors have become increasingly problematic in newer CMOS technologies. The integration of new elements from the periodic table, due to transistor miniaturization, introduces different properties (physical, chemical, mechanical, etc...) but natural radioactivity has so far not been considered. The new materials could increase the soft error rate, if the materials are natural radiation emitters. In this paper, the risk of integrating new materials, such as samarium and platinum, is studied by eva-luating the soft error rate of a 32 nm technology based on Monte Carlo simulations.

Keywords

CMOS integrated circuits; Monte Carlo methods; electrodes; high-k dielectric thin films; CMOS technology; Monte Carlo simulations; alpha-soft error rate; high-κ gate oxides; metal gate electrodes; natural radiation emitters; size 32 nm; Dielectrics; Electrodes; Isotopes; Logic gates; Materials; Platinum; Alpha particles; miniaturization; platinum; samarium; soft error;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131397

Filename

6131397