Title :
The improvement of electrical programmable fuse with salicide-block dielectric film in 40nm CMOS Technology
Author :
Wu, Kuei-Sheng ; Wong, Chang-Chien ; Chi, Sinclair ; Tseng, Ching-Hsiang ; Huang, Purple ; Huang, Devon ; Su, Titan
Author_Institution :
United Microelectron. Corp., Sinshih Township, Taiwan
Abstract :
This paper presents an improvement of electrical programmable fuse with dielectric film. By inserting a dielectric film as cap layer combined with self-align silicide block (SAB) process, the program current margin has been extended. This macro has lower program voltage at 2.3V for 8.5μs and can be successfully read out with proper sensing amplifier design.
Keywords :
CMOS integrated circuits; dielectric materials; electric fuses; CMOS technology; electrical programmable fuse; salicide-block dielectric film; self-align silicide block; CMOS technology; Cathodes; Circuits; Contacts; Dielectric films; Fuses; Plugs; Silicides; Silicon; Voltage;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510461
