Title :
Suppression of the floating-body effects in SOI MOSFETs by bandgap engineering
Author :
Terauchi, M. ; Yoshimi, M. ; Marakoshi, A. ; Ushiku, Y.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The floating-body effects, which are regarded as the most critical issues in applying Silicon-On-Insulator (SOI) devices to actual LSIs, can be suppressed by the reduction in bandgap energy in the source region. In addition to an increase in the drain breakdown voltage, the suppression of both kinks in I/sub d/-V/sub d/ characteristics and threshold voltage shift with an increase in drain voltage are achieved in sub-quarter micron Nch thin-film SOI MOSFETs.
Keywords :
MOSFET; energy gap; silicon-on-insulator; I-V characteristics; LSIs; bandgap engineering; drain breakdown voltage; floating-body effects; silicon-on-insulator devices; sub-quarter micron N-channel thin-film SOI MOSFETs; threshold voltage shift; Breakdown voltage; Laboratories; MOSFETs; Photonic band gap; Power engineering and energy; Research and development; Silicon on insulator technology; Threshold voltage; Transistors; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520847
