Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI

Author

Gaspard, N.J. ; Ahlbin, J.R. ; Gouker, P.M. ; Atkinson, N.M. ; Gadlage, M.J. ; Witulski, A.F. ; Holman, W.T. ; Bhuva, B.L. ; Zhang, E.X. ; Massengill, L.W.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

252

Lastpage

255

Abstract

Floating-body and body-tied inverter circuits were implemented in MIT Lincoln-Lab´s 3-dimensional SOI 150 nm process to characterize the technology for single-event effects. The circuits were tested with heavy-ions and single-event transients were measured for body-tied and floating-body inverters across all tiers. These experimental results show that for floating-body and body-tied circuits that the 3D SOI process exhibits the same SET trends as a 1D SOI process.

Keywords

logic gates; radiation hardening (electronics); silicon-on-insulator; 3D SOI process; MIT Lincoln-Lab 3-dimensional SOI process; SET; Si; body-tied inverter circuits; floating-body inverter circuits; heavy-ions; single-event effects; single-event transients; size 150 nm; Integrated circuit interconnections; Inverters; Pulse measurements; Random access memory; Three dimensional displays; Transient analysis; Transistors; 3DSOI; body tie; floating body; heavy ion; single-event transient;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131403

Filename

6131403