Title :
/spl alpha/-particle-induced soft errors in submicron SOI SRAM
Author :
Tosaka, Y. ; Suzuki, K. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We found the critical /spl alpha/-particle-induced generated charge which determines the soft errors in SOI SRAMs and showed that the soft error rate in submicron SOI SRAMs without body contacts is sometimes larger than that for bulk SRAMs due to the bipolar effect. This suggests the necessity for body contacts or for other technologies in SOI SRAM structures to reduce the bipolar effect.
Keywords :
MOS memory circuits; SRAM chips; alpha-particle effects; errors; silicon-on-insulator; /spl alpha/-particle irradiation; bipolar effect; body contacts; charge generation; soft errors; submicron SOI SRAM; Capacitance; Circuit noise; Circuit simulation; Circuit testing; Doping; Error analysis; MOS devices; MOSFETs; Random access memory; SPICE;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520849
