Title :
Low threshold InAsP/InGaP/InGaAsP/InP strain-compensated and compressively-strained 1.3 μm lasers grown by GSMBE
Author :
Uenohara, H. ; Gokhale, M.R. ; Dries, J.C. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We demonstrate, for the first time, strain-compensated InAsP/InGaP/InGaAsP/InP SCH-MQW lasers grown by Gas Source Molecular Beam Epitaxy (GSMBE). Also compressively strained InAsP/lnGaAsP/InP 1.3 μm lasers with record low threshold current densities were obtained. The threshold current density of 210 A/cm2 for compressively strained broad-area laser with 2.0-mm cavity was lower than the previously reported InAsP-based lasers grown by GSMBE
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; 1.3 micron; GSMBE growth; InAsP-InGaP-InGaAsP-InP; SCH-MQW laser; broad-area laser; compressively-strained laser; strain-compensated laser; threshold current density; Gas lasers; Indium phosphide; Optical materials; Q measurement; Quantum well devices; Quantum well lasers; Thickness measurement; Threshold current; X-ray diffraction; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600227
