• DocumentCode
    3034001
  • Title

    Impact of process variations on charge-sharing induced upset reversal in a 65nm flip-flop

  • Author

    Kauppila, A.V. ; Bhuva, B.L. ; Massengill, L.W. ; Holman, W.T. ; Ball, D.R.

  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    262
  • Lastpage
    265
  • Abstract
    Process variations impact the onset of charge sharing induced upset reversal by changing individual transistor behavior. It reduces or magnifies the ameliorating effect of charge reversal. This work analyzes the effect of variation on charge reversal in a 65nm flip-flop.
  • Keywords
    flip-flops; radiation hardening (electronics); ameliorating effect; charge-sharing-induced upset reversal; flip-flop; process variations; single-event upsets; size 65 nm; transistor behavior; CMOS integrated circuits; Correlation; Flip-flops; Integrated circuit modeling; Sensitivity; Threshold voltage; Transistors; Flip-flops; Process Parameter Variations; Pulse Reversal; Single event transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131405
  • Filename
    6131405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3034001