Pressure-controlled two-step TEOS-O/sub 3/ CVD eliminating the base material effect

Author

Saito, M. ; Kudoh, Y. ; Homma, Y.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

43

Lastpage

44

Abstract

A new pressure-controlled two-step TEOS-O/sub 3/ CVD has been developed to provide high quality SiO/sub 2/ films with flow-like step-coverage regardless of the underlying materials. Thin films, initially deposited under a low pressure but high O/sub 3/ concentration prior to the deposition of main films under sub/atmospheric pressure (AP), have as high quality as AP-TEOS-O/sub 3/ films, and eliminate the base material effect. Gap-filling for 0.2-/spl mu/m spaces with a high aspect ratio of 3.1 has been achieved.

Keywords

chemical vapour deposition; insulating thin films; silicon compounds; 0.2 micron; O/sub 3/; SiO/sub 2/; SiO/sub 2/ films; atmospheric pressure; base material effect; flow-like step-coverage; gap-filling; pressure-controlled two-step TEOS-O/sub 3/ CVD; sub-atmospheric pressure; Atmospheric-pressure plasmas; Etching; Laboratories; Planarization; Plasma applications; Plasma materials processing; Rough surfaces; Semiconductor films; Sputtering; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520851

Filename

520851