Application of force fill Al-plug technology to 64 Mb DRAM and 0.35 /spl mu/m logic

Author

Mizobuchi, K. ; Hamamoto, K. ; Utsugi, M. ; Dixit, G.A. ; Poarch, S. ; Havemann, R.H. ; Dobson, C.D. ; Jeffryes, A.I. ; Holverson, P.J. ; Rich, P. ; Butler, D.C. ; Rimmer, N. ; McGeown, A.

Author_Institution

ULSI Technol. Center, Texas Instrum. Japan, Ibaraki, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

45

Lastpage

46

Abstract

A novel high pressure (60 MPa) force fill Al-plug technology has been previously shown to be suitable for sub-half micron contact and via hole filling. This paper describes the first application of the new aluminum force fill technology to actual ULSI circuits-64 Mb DRAMs and 0.35 /spl mu/m Logic devices. For both applications, improved electrical performance and superior or equivalent yield has been demonstrated for the high pressure Al-plug approach as compared with the standard hole filling process (W-plug for logic devices and W-liner for DRAMs). Full bit functional 64 Mb generation DRAMs fabricated using the new aluminum force fill technology show nominal electrical behavior with no anomalous reliability issues.

Keywords

DRAM chips; ULSI; aluminium; high-pressure techniques; integrated circuit metallisation; integrated logic circuits; 0.35 micron; 60 MPa; 64 Mbit; Al; DRAMs; ULSI circuits; electrical performance; high pressure force fill Al-plug technology; logic devices; reliability; sub-half micron contacts; via hole filling; yield; Aluminum; Contacts; Filling; Instruments; Integrated circuit interconnections; Logic devices; Nonhomogeneous media; Plugs; Random access memory; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520852

Filename

520852