Simulation of Total Ionising Dose on LDMOS devices for High Energy Physics applications

Author

Fernández-Martínez, P. ; Palomo, F.R. ; Díez, S. ; Hidalgo, S. ; Ullán, M. ; Flores, D. ; Sorge, R.

Author_Institution

Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

384

Lastpage

389

Abstract

The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of Lateral Diffused MOS transistors (LDMOS) requires the performance of a large number of complex and costly irradiation experiments. The development of a suitable simulation procedure would be of major interest in order to reduce the effort in time and cost. This paper describes a simulation methodology for the emulation of TID effects based on a physics-based code. The obtained simulation results are validated by comparing with available experimental data which are also used to tune the simulation fitting parameters.

Keywords

MOSFET; radiation hardening (electronics); LDMOS transistors; TID simulation; high energy physics applications; irradiation experiments; lateral diffused MOS transistors; physics-based code; simulation fitting parameters; total ionising dose simulation; Equations; Logic gates; Mathematical model; Performance evaluation; Radiation effects; Simulation; Transistors; Fixed Oxide Charge; Interface Traps; LDMOS power devices; TCAD Simulation; Total Ionising Dose (TID);

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131412

Filename

6131412